We presented here the theoretical analysis of high frequency magnetoelectric (ME) effects for a ferrite-piezoelectric bilayer and a detailed treatment for electric field induced resonance field shift for ferromagnetic resonance (FMR) in layered structures. ME effects in a single-crystal ferrite-piezoelectric bilayer in the magnetoelastic resonance region are considered. The theory predicts a giant ME effect at magnetoacoustic resonance. The enhancement in ME effect predicted by our theory arises from interaction between elastic modes and the uniform precession mode, resulting in magnetoelastic modes. The peak ME voltage coefficient appears at the coincidence of acoustic resonance and FMR frequencies. In our calculations, we suppose that the layer thickness is sufficiently large to neglect the influence of strain relaxation on average stresses in the structures that determine the ME voltage coefficient. The work presented here will certainly be of interest for the design and analysis of electrically controlled high-frequency devices. Microwave devices of magnetic type with electrical control have unique advantages over traditional ferrite and semiconductor analogs.
ASJC Scopus subject areas
- General Physics and Astronomy