Pressure induced phase transition in defect chalcopyrite compounds

S. Meenakshi

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The large band gap semiconducting compounds of the type A IIB2IIIC4VI crystallizing in the defect chalcopyrite (DCP) tetragonal structure are of great technological interest and have potential applications in non linear optical and photovoltaic devices. These compounds contain a crystallographically ordered array of vacancies (stoichiometric voids) in the cation sublattice and exhibit several interesting physical and chemical properties. The presence of the vacancies facilitates the doping of these compounds by impurities and has stimulated investigations about occurrence of order-disorder effects in the cation sublattice. In this presentation our recent experimental results on the high pressure investigations on some of the defect chalcopyrite compounds would be discussed.

Original languageEnglish
Article number012024
JournalJournal of Physics: Conference Series
Volume377
Issue number1
DOIs
StatePublished - 1 Jan 2012
Externally publishedYes
Event23rd International Conference on High Pressure Science and Technology, AIRAPT-23 - Mumbai, India
Duration: 25 Sep 201130 Sep 2011

ASJC Scopus subject areas

  • Physics and Astronomy (all)

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