Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4

S. Meenakshi; V. Vijayakumar; A. Eifler; H. D. Hochheimer

doi:10.1016/j.jpcs.2010.02.007

Pressure-induced phase transition in defect Chalcopyrites HgAl₂Se₄ and CdAl₂S₄

S. Meenakshi, V. Vijayakumar, A. Eifler, H. D. Hochheimer

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl₂Se₄ and CdAl₂S₄ up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl₂Se₄ and CdAl₂S₄ up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl₂Se₄ and CdAl₂S₄ in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites.

Original language	English
Pages (from-to)	832-835
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	71
Issue number	5
DOIs	https://doi.org/10.1016/j.jpcs.2010.02.007
State	Published - 1 May 2010
Externally published	Yes

Keywords

A. Optical materials
A. Semiconductors
C. High Pressure
C. X-ray diffraction

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

Access to Document

10.1016/j.jpcs.2010.02.007

Cite this

@article{ed6143cf99d04900982ddd4edc334f66,

title = "Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4",

abstract = "Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites.",

keywords = "A. Optical materials, A. Semiconductors, C. High Pressure, C. X-ray diffraction",

author = "S. Meenakshi and V. Vijayakumar and A. Eifler and Hochheimer, {H. D.}",

note = "Funding Information: Measurements were carried out under the Indo-Italian Program of Cooperation in Science and Technology. We acknowledge the unfailing help received from Dr. P. Maurizio, Dr. A. Lausi and Dr. E. Bussetto during the measurements at Elettra. The DST (India) and the Italian foreign ministry have provided the financial support for travel to Elettra and accommodation respectively.",

year = "2010",

month = may,

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doi = "10.1016/j.jpcs.2010.02.007",

language = "English",

volume = "71",

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journal = "Journal of Physics and Chemistry of Solids",

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TY - JOUR

T1 - Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4

AU - Meenakshi, S.

AU - Vijayakumar, V.

AU - Eifler, A.

AU - Hochheimer, H. D.

N1 - Funding Information: Measurements were carried out under the Indo-Italian Program of Cooperation in Science and Technology. We acknowledge the unfailing help received from Dr. P. Maurizio, Dr. A. Lausi and Dr. E. Bussetto during the measurements at Elettra. The DST (India) and the Italian foreign ministry have provided the financial support for travel to Elettra and accommodation respectively.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites.

AB - Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites.

KW - A. Optical materials

KW - A. Semiconductors

KW - C. High Pressure

KW - C. X-ray diffraction

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U2 - 10.1016/j.jpcs.2010.02.007

DO - 10.1016/j.jpcs.2010.02.007

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JO - Journal of Physics and Chemistry of Solids

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