Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4

S. Meenakshi, V. Vijayakumar, A. Eifler, H. D. Hochheimer

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl2Se4 and CdAl2S4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl2Se4 and CdAl2S4 up to 13 and 9 GPa respectively. The values of the bulk modulus estimated from the Equation of State is 66(1.5) and 44.6(1) GPa for HgAl2Se4 and CdAl2S4 in the chalcopyrite phase. At higher pressure a disordered rock-salt structure and on pressure release a disordered zinc blende structure with broad X-ray diffraction lines are observed as is the case for several defect chalcopyrites.

Original languageEnglish
Pages (from-to)832-835
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume71
Issue number5
DOIs
StatePublished - 1 May 2010
Externally publishedYes

Keywords

  • A. Optical materials
  • A. Semiconductors
  • C. High Pressure
  • C. X-ray diffraction

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4'. Together they form a unique fingerprint.

Cite this