Pressure-induced polymorphism in hypervalent Cs I3

Nishant N. Patel, Meenakshi Sunder, Alka B. Garg, H. K. Poswal

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We report the results of ambient temperature high-pressure synchrotron-based x-ray diffraction, Raman, and electrical resistance study of CsI3 up to 29, 25, and 8 GPa, respectively, and confirm three-phase transitions under quasihydrostatic conditions. The ambient orthorhombic (space group (SG): Pnma) phase of CsI3 is stable up to a pressure of ∼1.3GPa, above which a phase transition to a trigonal (SG:P-3c1) phase is observed. The stability region of the trigonal phase has been found to be up to 22.6 GPa, above which the trigonal phase transforms to a cubic (SG:Pm-3n) phase which remains stable until the maximum pressure of 29 GPa achieved in this study. A third-order Birch-Murnaghan equation of state fit to the pressure volume (P-V) data yields a bulk modulus of 17.7(9) GPa for the trigonal phase. Raman spectroscopic measurements however indicate three-phase transitions at ∼1.3,4.0, and 22.6 GPa, respectively. The electrical resistance measured in the low-pressure region up to 8 GPa indicates an electronic transition at around 4 GPa confirming the Raman result observed at 4.0 GPa. The P-V data when transformed to the universal equation of state (UEOS) show a deviation from linearity around 4.0 GPa confirming the electronic transition. The present study has thus revealed a three-phase structural sequence in alkali trihalides, viz., orthorhombic (SG: Pnma) to trigonal (SG:P-3c1) to a cubic (SG:Pm-3n) phase.

Original languageEnglish
Article number174114
JournalPhysical Review B
Volume96
Issue number17
DOIs
StatePublished - 27 Nov 2017
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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