Primary investigation of anodized aluminium as a substrate for hybrid microelectronics Part 2. Behaviour of thick film circuit components

The analysis is treated of the transient and steady-state processes in a high frequency resonant circuit that may be used, for example, as a high frequency sriubber at the input terminals of a voltage fed converter. Sets of differential and difference equations governing the transient and steady-state processes are found and solved. The solution is obtained in closed form. Theoretical and experimental results, both for transient and steady-state conditions, are compared and satisfactory agreement shown.