Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

Basant Chitara; Kunyan Zhang; Martha Y.Garcia Cervantes; Tej B. Limbu; Bikram Adhikari; Shengxi Huang; Fei Yan

doi:10.1557/s43579-021-00117-w

Probing charge transfer in 2D MoS₂/tellurene type-II p–n heterojunctions

Basant Chitara, Kunyan Zhang, Martha Y.Garcia Cervantes, Tej B. Limbu, Bikram Adhikari, Shengxi Huang, Fei Yan

Research output: Contribution to journal › Comment/debate

5 Scopus citations

Abstract

2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS₂, to study its charge transfer for photovoltaic applications. The charge transfer of MoS₂/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS₂/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS₂. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	868-872
Number of pages	5
Journal	MRS Communications
Volume	11
Issue number	6
DOIs	https://doi.org/10.1557/s43579-021-00117-w
State	Published - 1 Dec 2021
Externally published	Yes

Keywords

2D materials
Heterostructure
Layered
Nanoscale
Photovoltaic
Te

ASJC Scopus subject areas

General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/s43579-021-00117-w

Cite this

@article{e346ce36722b4bb2a9ced6058601e02c,

title = "Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions",

abstract = "2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].",

keywords = "2D materials, Heterostructure, Layered, Nanoscale, Photovoltaic, Te",

author = "Basant Chitara and Kunyan Zhang and Cervantes, {Martha Y.Garcia} and Limbu, {Tej B.} and Bikram Adhikari and Shengxi Huang and Fei Yan",

note = "Publisher Copyright: {\textcopyright} 2021, The Author(s), under exclusive licence to The Materials Research Society.",

year = "2021",

month = dec,

day = "1",

doi = "10.1557/s43579-021-00117-w",

language = "English",

volume = "11",

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journal = "MRS Communications",

issn = "2159-6859",

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TY - JOUR

T1 - Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

AU - Chitara, Basant

AU - Zhang, Kunyan

AU - Cervantes, Martha Y.Garcia

AU - Limbu, Tej B.

AU - Adhikari, Bikram

AU - Huang, Shengxi

AU - Yan, Fei

PY - 2021/12/1

Y1 - 2021/12/1

N2 - 2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

AB - 2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

KW - 2D materials

KW - Heterostructure

KW - Layered

KW - Nanoscale

KW - Photovoltaic

KW - Te

UR - http://www.scopus.com/inward/record.url?scp=85118579291&partnerID=8YFLogxK

U2 - 10.1557/s43579-021-00117-w

DO - 10.1557/s43579-021-00117-w

M3 - Comment/debate

AN - SCOPUS:85118579291

SN - 2159-6859

VL - 11

SP - 868

EP - 872

JO - MRS Communications

JF - MRS Communications

IS - 6

ER -