Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

Basant Chitara; Kunyan Zhang; Martha Y.Garcia Cervantes; Tej B. Limbu; Bikram Adhikari; Shengxi Huang; Fei Yan

doi:10.1557/s43579-021-00117-w

Probing charge transfer in 2D MoS₂/tellurene type-II p–n heterojunctions

Basant Chitara
, Kunyan Zhang
, Martha Y.Garcia Cervantes
, Tej B. Limbu
, Bikram Adhikari
, Shengxi Huang
, Fei Yan

Research output: Contribution to journal › Comment/debate

6 Scopus citations

Abstract

2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS₂, to study its charge transfer for photovoltaic applications. The charge transfer of MoS₂/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS₂/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS₂. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	868-872
Number of pages	5
Journal	MRS Communications
Volume	11
Issue number	6
DOIs	https://doi.org/10.1557/s43579-021-00117-w
State	Published - 1 Dec 2021
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

2D materials
Heterostructure
Layered
Nanoscale
Photovoltaic
Te

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1557/s43579-021-00117-w

Cite this

@article{e091c4ffe24749ab8e657d4fa36701c2,

title = "Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions",

abstract = "2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].",

keywords = "2D materials, Heterostructure, Layered, Nanoscale, Photovoltaic, Te",

author = "Basant Chitara and Kunyan Zhang and Cervantes, \{Martha Y.Garcia\} and Limbu, \{Tej B.\} and Bikram Adhikari and Shengxi Huang and Fei Yan",

note = "Publisher Copyright: {\textcopyright} 2021, The Author(s), under exclusive licence to The Materials Research Society.",

year = "2021",

month = dec,

day = "1",

doi = "10.1557/s43579-021-00117-w",

language = "English",

volume = "11",

pages = "868--872",

journal = "MRS Communications",

issn = "2159-6859",

publisher = "Springer International Publishing AG",

number = "6",

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TY - JOUR

T1 - Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

AU - Chitara, Basant

AU - Zhang, Kunyan

AU - Cervantes, Martha Y.Garcia

AU - Limbu, Tej B.

AU - Adhikari, Bikram

AU - Huang, Shengxi

AU - Yan, Fei

PY - 2021/12/1

Y1 - 2021/12/1

N2 - 2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

AB - 2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

KW - 2D materials

KW - Heterostructure

KW - Layered

KW - Nanoscale

KW - Photovoltaic

KW - Te

UR - https://www.scopus.com/pages/publications/85118579291

U2 - 10.1557/s43579-021-00117-w

DO - 10.1557/s43579-021-00117-w

M3 - Comment/debate

AN - SCOPUS:85118579291

SN - 2159-6859

VL - 11

SP - 868

EP - 872

JO - MRS Communications

JF - MRS Communications

IS - 6

ER -