TY - GEN
T1 - Probing interface roughness of the GaAs/Al0.3Ga0.7As multi-quantum-well structures using low-temperature photoluminescence spectra
AU - Maitra, T.
AU - Mukherjee, S.
AU - Pradhan, A.
AU - Mukherjee, S.
AU - Nayak, A.
AU - Bhunia, S.
N1 - Publisher Copyright:
© 2020 Author(s).
PY - 2020/5/4
Y1 - 2020/5/4
N2 - The optical properties of Metalorganic vapour phase epitaxy (MOVPE) grown GaAs/Al0.3Ga0.7As multi-quantum-well structure have been investigated with the help of both room temperature (300 K) and low temperature (4 K) photoluminescence (PL) technique. The morphology of the grown heterostructure has been evaluated from the cross-sectional transmission electron microscopy (XTEM) measurements. We have observed three distinct PL peaks at 1.5672 eV, 1.6047 eV and 1.677 eV corresponding to the three quantum wells at 4 K which exhibited significant quantum shift due to the confinement of the carriers in the respective quantum wells. The plot of quantum shift as function of well width shows that the shift being largest for the thinnest quantum well. A model is further employed to correlate the interface roughness in terms of the obtained line widths of the PL spectra. From this model, the interface roughness due to the three quantum wells viz. 84 Å, 64 Å, and 44 Å, are 13.17 Å, 10.41 Å and 8.66 Å, respectively.
AB - The optical properties of Metalorganic vapour phase epitaxy (MOVPE) grown GaAs/Al0.3Ga0.7As multi-quantum-well structure have been investigated with the help of both room temperature (300 K) and low temperature (4 K) photoluminescence (PL) technique. The morphology of the grown heterostructure has been evaluated from the cross-sectional transmission electron microscopy (XTEM) measurements. We have observed three distinct PL peaks at 1.5672 eV, 1.6047 eV and 1.677 eV corresponding to the three quantum wells at 4 K which exhibited significant quantum shift due to the confinement of the carriers in the respective quantum wells. The plot of quantum shift as function of well width shows that the shift being largest for the thinnest quantum well. A model is further employed to correlate the interface roughness in terms of the obtained line widths of the PL spectra. From this model, the interface roughness due to the three quantum wells viz. 84 Å, 64 Å, and 44 Å, are 13.17 Å, 10.41 Å and 8.66 Å, respectively.
UR - https://www.scopus.com/pages/publications/85099186072
U2 - 10.1063/5.0001699
DO - 10.1063/5.0001699
M3 - Conference contribution
AN - SCOPUS:85099186072
T3 - AIP Conference Proceedings
BT - 3rd International Conference on Condensed Matter and Applied Physics, ICC 2019
A2 - Shekhawat, Manoj Singh
A2 - Bhardwaj, Sudhir
A2 - Suthar, Bhuvneshwer
PB - American Institute of Physics Inc.
T2 - 3rd International Conference on Condensed Matter and Applied Physics, ICC 2019
Y2 - 14 October 2019 through 15 October 2019
ER -