Photodiodes based on p-type monocrystal CdxHg1-xTe, with composition x between 0.3 and 0.5 suitable for the spectral range 1.5-3.5 μm are produced. There are two methods of formation of p-n junction: diffusion in mercury vapors and implantation by aluminum ions. Produced photodiodes have been tested for the following parameters: relative spectral response, current response, detectivity and response time.
|Number of pages||3|
|State||Published - 1 Jan 1995|
|Event||Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2) - Nis, Serbia|
Duration: 12 Sep 1995 → 14 Sep 1995
|Conference||Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)|
|Period||12/09/95 → 14/09/95|