Production and characterization of cadmium-mercury-telluride photodiodes in 1.5-3.5μm spectral range

Vesna Damnjanovic; Jovan Elazar

Production and characterization of cadmium-mercury-telluride photodiodes in 1.5-3.5μm spectral range

Vesna Damnjanovic, Jovan Elazar

Research output: Contribution to conference › Paper › peer-review

Abstract

Photodiodes based on p-type monocrystal Cd_xHg_1-xTe, with composition x between 0.3 and 0.5 suitable for the spectral range 1.5-3.5 μm are produced. There are two methods of formation of p-n junction: diffusion in mercury vapors and implantation by aluminum ions. Produced photodiodes have been tested for the following parameters: relative spectral response, current response, detectivity and response time.

Original language	English
Pages	277-279
Number of pages	3
State	Published - 1 Jan 1995
Externally published	Yes
Event	Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2) - Nis, Serbia Duration: 12 Sep 1995 → 14 Sep 1995

Conference

Conference	Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)
City	Nis, Serbia
Period	12/09/95 → 14/09/95

Cite this

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title = "Production and characterization of cadmium-mercury-telluride photodiodes in 1.5-3.5μm spectral range",

abstract = "Photodiodes based on p-type monocrystal CdxHg1-xTe, with composition x between 0.3 and 0.5 suitable for the spectral range 1.5-3.5 μm are produced. There are two methods of formation of p-n junction: diffusion in mercury vapors and implantation by aluminum ions. Produced photodiodes have been tested for the following parameters: relative spectral response, current response, detectivity and response time.",

author = "Vesna Damnjanovic and Jovan Elazar",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "277--279",

note = "Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2) ; Conference date: 12-09-1995 Through 14-09-1995",

}

TY - CONF

T1 - Production and characterization of cadmium-mercury-telluride photodiodes in 1.5-3.5μm spectral range

AU - Damnjanovic, Vesna

AU - Elazar, Jovan

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Photodiodes based on p-type monocrystal CdxHg1-xTe, with composition x between 0.3 and 0.5 suitable for the spectral range 1.5-3.5 μm are produced. There are two methods of formation of p-n junction: diffusion in mercury vapors and implantation by aluminum ions. Produced photodiodes have been tested for the following parameters: relative spectral response, current response, detectivity and response time.

AB - Photodiodes based on p-type monocrystal CdxHg1-xTe, with composition x between 0.3 and 0.5 suitable for the spectral range 1.5-3.5 μm are produced. There are two methods of formation of p-n junction: diffusion in mercury vapors and implantation by aluminum ions. Produced photodiodes have been tested for the following parameters: relative spectral response, current response, detectivity and response time.

UR - http://www.scopus.com/inward/record.url?scp=0029534274&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029534274

SP - 277

EP - 279

T2 - Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)

Y2 - 12 September 1995 through 14 September 1995

ER -

Production and characterization of cadmium-mercury-telluride photodiodes in 1.5-3.5μm spectral range

Abstract

Conference

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