Properties of light emission from silicon junctions

Herzl Aharoni, Monuko Du Plessis, Lukas W. Snyman

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Some properties of radiation originating from an avalanching silicon light emitting diode (Si-LED) are dealt with. They are derived from various parts of the spectrum of the Si-LED light. The interdependence of the light output intensity (Li), wavelength ((lambda) ) and reverse current (IR) are determined, as well as the rate of change dLi/d(lambda) and dLi/dIR as a function of (lambda) and IR. The result demonstrate that Li and, to a much lesser extent (lambda) , can be controlled by IR.

Original languageEnglish
Pages (from-to)303-309
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1 Dec 1997
Event10th Meeting on Optical Engineering in Israel - Jerusalem, Israel
Duration: 2 Mar 19972 Mar 1997


  • Light-emitting diodes
  • Silicon
  • Spectrum

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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