Properties of light emission from silicon junctions

Herzl Aharoni; Monuko Du Plessis; Lukas W. Snyman

doi:10.1117/12.281338

Properties of light emission from silicon junctions

Herzl Aharoni, Monuko Du Plessis, Lukas W. Snyman

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Some properties of radiation originating from an avalanching silicon light emitting diode (Si-LED) are dealt with. They are derived from various parts of the spectrum of the Si-LED light. The interdependence of the light output intensity (Li), wavelength ((lambda) ) and reverse current (I_R) are determined, as well as the rate of change dLi/d(lambda) and dLi/dI_R as a function of (lambda) and I_R. The result demonstrate that Li and, to a much lesser extent (lambda) , can be controlled by I_R.

Original language	English
Pages (from-to)	303-309
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3110
DOIs	https://doi.org/10.1117/12.281338
State	Published - 1 Dec 1997
Event	10th Meeting on Optical Engineering in Israel - Jerusalem, Israel Duration: 2 Mar 1997 → 2 Mar 1997

Keywords

Light-emitting diodes
Silicon
Spectrum

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.281338

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title = "Properties of light emission from silicon junctions",

abstract = "Some properties of radiation originating from an avalanching silicon light emitting diode (Si-LED) are dealt with. They are derived from various parts of the spectrum of the Si-LED light. The interdependence of the light output intensity (Li), wavelength ((lambda) ) and reverse current (IR) are determined, as well as the rate of change dLi/d(lambda) and dLi/dIR as a function of (lambda) and IR. The result demonstrate that Li and, to a much lesser extent (lambda) , can be controlled by IR.",

keywords = "Light-emitting diodes, Silicon, Spectrum",

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TY - JOUR

T1 - Properties of light emission from silicon junctions

AU - Aharoni, Herzl

AU - Du Plessis, Monuko

AU - Snyman, Lukas W.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Some properties of radiation originating from an avalanching silicon light emitting diode (Si-LED) are dealt with. They are derived from various parts of the spectrum of the Si-LED light. The interdependence of the light output intensity (Li), wavelength ((lambda) ) and reverse current (IR) are determined, as well as the rate of change dLi/d(lambda) and dLi/dIR as a function of (lambda) and IR. The result demonstrate that Li and, to a much lesser extent (lambda) , can be controlled by IR.

AB - Some properties of radiation originating from an avalanching silicon light emitting diode (Si-LED) are dealt with. They are derived from various parts of the spectrum of the Si-LED light. The interdependence of the light output intensity (Li), wavelength ((lambda) ) and reverse current (IR) are determined, as well as the rate of change dLi/d(lambda) and dLi/dIR as a function of (lambda) and IR. The result demonstrate that Li and, to a much lesser extent (lambda) , can be controlled by IR.

KW - Light-emitting diodes

KW - Silicon

KW - Spectrum

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U2 - 10.1117/12.281338

DO - 10.1117/12.281338

M3 - Conference article

AN - SCOPUS:60849113145

SN - 0277-786X

VL - 3110

SP - 303

EP - 309

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 10th Meeting on Optical Engineering in Israel

Y2 - 2 March 1997 through 2 March 1997

ER -

Properties of light emission from silicon junctions

Abstract

Keywords

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