Proposed approach to drive wafer topography for advanced lithography

John F. Valley, Andrey Melnikov, John A. Pitney

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

One requirement for advanced lithography remains suitable incoming wafer topography. We propose that local wafer flatness be visualized and quantified using the techniques developed for wafer front-surface nanotopography. This is a significant change in that existing wafer topography metrology tools do not enable our proposed approach.

Original languageEnglish
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXX
EditorsMartha I. Sanchez, Vladimir A. Ukraintsev
PublisherSPIE
ISBN (Electronic)9781510600133
DOIs
StatePublished - 1 Jan 2016
Externally publishedYes
Event30th Conference on Metrology, Inspection, and Process Control for Microlithography - San Jose, United States
Duration: 22 Feb 201625 Feb 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9778
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference30th Conference on Metrology, Inspection, and Process Control for Microlithography
Country/TerritoryUnited States
CitySan Jose
Period22/02/1625/02/16

Keywords

  • Flatness
  • Nanotopography
  • Wafer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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