TY - CONF
T1 - Pulsed laser deposition of In2O3-SnO2: from films to nano-wires
AU - Del Gaudio, Davide
AU - Mason, Erica
AU - Serratos, Benjamin
AU - Heron, John
AU - Shalish, Ilan
AU - Goldman, Rachel
PY - 2018
Y1 - 2018
N2 - Metal oxides have been identified as promising materials many devices,
such as lithium ion batteries and UV lasers. Furthermore, metal-oxide
NWs have been embedded in field-effect transistors, lasers, solar cells,
and various chemical sensors. Pulsed-laser deposition (PLD) has emerged
as a promising approach for the fabrication of tin-doped indium oxide
(ITO), with film or NW growth determined by the choice of a reactive
(O2) or inert (N2) atmosphere. However, a
mechanistic understanding of the influence of growth parameters on the
morphology, composition, and crystal structure of the deposited film is
needed. Additionally, PLD of various
In2O3-SnO2 mixtures has yet to be
considered. We report on PLD of various In2O3
-SnO2 mixtures on sapphire substrates. Using an inert
atmosphere, we have identified parameters to obtain pyramid-shaped
nano-scale clusters; tapered nano-rods; and high density, vertically
oriented NWs. We explain the influence of deposition pressure on the
growth mode transition from straight NW to tapered NW to pyramidal
nano-clusters. Additionally, we examine the influence of deposition
pressure and NW diameter on the NW resistivity, obtained via single-NW
IV characteristics measurements.
This work is supported by NSF Grant ECCS-1610362.
AB - Metal oxides have been identified as promising materials many devices,
such as lithium ion batteries and UV lasers. Furthermore, metal-oxide
NWs have been embedded in field-effect transistors, lasers, solar cells,
and various chemical sensors. Pulsed-laser deposition (PLD) has emerged
as a promising approach for the fabrication of tin-doped indium oxide
(ITO), with film or NW growth determined by the choice of a reactive
(O2) or inert (N2) atmosphere. However, a
mechanistic understanding of the influence of growth parameters on the
morphology, composition, and crystal structure of the deposited film is
needed. Additionally, PLD of various
In2O3-SnO2 mixtures has yet to be
considered. We report on PLD of various In2O3
-SnO2 mixtures on sapphire substrates. Using an inert
atmosphere, we have identified parameters to obtain pyramid-shaped
nano-scale clusters; tapered nano-rods; and high density, vertically
oriented NWs. We explain the influence of deposition pressure on the
growth mode transition from straight NW to tapered NW to pyramidal
nano-clusters. Additionally, we examine the influence of deposition
pressure and NW diameter on the NW resistivity, obtained via single-NW
IV characteristics measurements.
This work is supported by NSF Grant ECCS-1610362.
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ER -
