Pyroelectric, piezoelectric and photoeffects in hydroxyapatite thin films on silicon

S. B. Lang, S. A.M. Tofail, A. A. Gandhi, M. Gregor, C. Wolf-Brandstetter, J. Kost, S. Bauer, M. Krause

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Tofail et al. 3 have found that the dipole of HA is the hydroxyl (OH) ion, which lies along the crystallographic c-axis within the tunnel formed by phosphate (PO 4) tetrahedra. In adjacent tunnels, the OH ions could point in a parallel direction or in an anti-parallel one. We believe that the high-temperature calcination crystallized the HA film on silicon and converted most of the OH pairs to a parallel configuration. Thus the HA developed a domain structure with randomly oriented dipoles. Upon cooling, sufficient domains reoriented in polarity so as to result in a net polar structure. This is due to the crystalline character of the silicon substrate and texturing. The photocurrent is caused by the silicon alone.

Original languageEnglish
Title of host publication2011 - 14th International Symposium on Electrets, ISE 2011
Pages87-88
Number of pages2
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE 14th International Symposium on Electrets, ISE 2011 - Montpellier, France
Duration: 28 Aug 201131 Aug 2011

Publication series

NameProceedings - International Symposium on Electrets

Conference

Conference2011 IEEE 14th International Symposium on Electrets, ISE 2011
Country/TerritoryFrance
CityMontpellier
Period28/08/1131/08/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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