TY - GEN
T1 - Pyroelectric, piezoelectric and photoeffects in hydroxyapatite thin films on silicon
AU - Lang, S. B.
AU - Tofail, S. A.M.
AU - Gandhi, A. A.
AU - Gregor, M.
AU - Wolf-Brandstetter, C.
AU - Kost, J.
AU - Bauer, S.
AU - Krause, M.
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Tofail et al. 3 have found that the dipole of HA is the hydroxyl (OH) ion, which lies along the crystallographic c-axis within the tunnel formed by phosphate (PO 4) tetrahedra. In adjacent tunnels, the OH ions could point in a parallel direction or in an anti-parallel one. We believe that the high-temperature calcination crystallized the HA film on silicon and converted most of the OH pairs to a parallel configuration. Thus the HA developed a domain structure with randomly oriented dipoles. Upon cooling, sufficient domains reoriented in polarity so as to result in a net polar structure. This is due to the crystalline character of the silicon substrate and texturing. The photocurrent is caused by the silicon alone.
AB - Tofail et al. 3 have found that the dipole of HA is the hydroxyl (OH) ion, which lies along the crystallographic c-axis within the tunnel formed by phosphate (PO 4) tetrahedra. In adjacent tunnels, the OH ions could point in a parallel direction or in an anti-parallel one. We believe that the high-temperature calcination crystallized the HA film on silicon and converted most of the OH pairs to a parallel configuration. Thus the HA developed a domain structure with randomly oriented dipoles. Upon cooling, sufficient domains reoriented in polarity so as to result in a net polar structure. This is due to the crystalline character of the silicon substrate and texturing. The photocurrent is caused by the silicon alone.
UR - http://www.scopus.com/inward/record.url?scp=84855293438&partnerID=8YFLogxK
U2 - 10.1109/ISE.2011.6084995
DO - 10.1109/ISE.2011.6084995
M3 - Conference contribution
AN - SCOPUS:84855293438
SN - 9781457710230
T3 - Proceedings - International Symposium on Electrets
SP - 87
EP - 88
BT - 2011 - 14th International Symposium on Electrets, ISE 2011
T2 - 2011 IEEE 14th International Symposium on Electrets, ISE 2011
Y2 - 28 August 2011 through 31 August 2011
ER -