Quantification of mobile charge carrier yield and transport lengths in ultrathin film light-trapping ZnFe₂O₄ photoanodes

Zinc ferrite (ZnFe₂O₄, ZFO) has gained attention as a candidate material for photoelectrochemical water oxidation. However, champion devices have achieved photocurrents far below that predicted by its bandgap energy. Herein, strong optical interference is employed in compact ultrathin film (8–14 nm) Ti-doped ZFO films deposited on specular back reflectors to boost photoanode performance through enhanced light trapping, resulting in a roughly fourfold improvement in absorption as compared to films deposited on transparent substrates. The spatial charge carrier collection profile and wavelength-dependent photogeneration yield of mobile charge carriers was then extracted via spatial collection efficiency analysis based on optical and external quantum efficiency measurements. We demonstrate that despite the enhanced performance enabled by the light trapping structure, substantial recombination occurs for thin film ZFO photoanodes even within the space charge region of an ultrathin film photoanode. Furthermore, the excitation-wavelength-dependent yield of mobile charge carriers in ZFO is shown to be less than unity across the visible spectrum, ultimately limiting the attainable photocurrent density. These results explain the underperformance of ZFO as a photoanode material and suggest that reduction of the mobile charge carrier yield due to the existence of ligand field states is a dominant loss mechanism for metal-oxides containing Fe metal centers with open d-shell configuration.