Quantitative evaluation of chemisorption processes on semiconductors

A. Rothschild, Y. Komem, N. Ashkenasy

Research output: Contribution to journalArticlepeer-review

61 Scopus citations

Abstract

The quantitative evaluation of the effect of chemisorption on the electronic properties of semicondutor surfaces was presented. A method for numerical computation of the degree of coverage of chemisorbates and the resultant surface band bending as a function of the temperature, semiconductor doping level and ambient gas pressure was presented. The method was applied for simulating the chemisorption behavior of oxygen on n-type CdS and it was found that the chemisorption of adions saturated when the Fermi level was aligned with the chemisorption-induced surface states, limiting their coverage to a small fraction of a monolayer.

Original languageEnglish
Pages (from-to)7090-7097
Number of pages8
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
StatePublished - 15 Dec 2002
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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