Abstract
The quantitative evaluation of the effect of chemisorption on the electronic properties of semicondutor surfaces was presented. A method for numerical computation of the degree of coverage of chemisorbates and the resultant surface band bending as a function of the temperature, semiconductor doping level and ambient gas pressure was presented. The method was applied for simulating the chemisorption behavior of oxygen on n-type CdS and it was found that the chemisorption of adions saturated when the Fermi level was aligned with the chemisorption-induced surface states, limiting their coverage to a small fraction of a monolayer.
| Original language | English |
|---|---|
| Pages (from-to) | 7090-7097 |
| Number of pages | 8 |
| Journal | Journal of Applied Physics |
| Volume | 92 |
| Issue number | 12 |
| DOIs | |
| State | Published - 15 Dec 2002 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (all)