Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy

G. Lubarsky; R. Shikler; N. Ashkenasy; Y. Rosenwaks

doi:10.1116/1.1502701

Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy

G. Lubarsky, R. Shikler, N. Ashkenasy, Y. Rosenwaks

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The Kelvin probe force microscopy (KPFM) which is used for quantitative measurements of locally trapped charge in dielectric stacked gate structures is demonstrated. The trapped charge distribution and concentration is calculated using the 2D Poisson equation. It is shown that a peak trapped charge density of around 1X10¹²cm^-2 with a spreading of ∼250 nm is obtained using 15 V pulses a few milliseconds in duration.

Original language	English
Pages (from-to)	1914-1917
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1502701
State	Published - 1 Sep 2002
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1502701

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@article{87e6dfc7b27540a98c0176a9b98c4d63,

title = "Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy",

abstract = "The Kelvin probe force microscopy (KPFM) which is used for quantitative measurements of locally trapped charge in dielectric stacked gate structures is demonstrated. The trapped charge distribution and concentration is calculated using the 2D Poisson equation. It is shown that a peak trapped charge density of around 1X1012cm-2 with a spreading of ∼250 nm is obtained using 15 V pulses a few milliseconds in duration.",

author = "G. Lubarsky and R. Shikler and N. Ashkenasy and Y. Rosenwaks",

year = "2002",

month = sep,

day = "1",

doi = "10.1116/1.1502701",

language = "English",

volume = "20",

pages = "1914--1917",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "5",

}

Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy. / Lubarsky, G.; Shikler, R.; Ashkenasy, N. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5, 01.09.2002, p. 1914-1917.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy

AU - Lubarsky, G.

AU - Shikler, R.

AU - Ashkenasy, N.

AU - Rosenwaks, Y.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - The Kelvin probe force microscopy (KPFM) which is used for quantitative measurements of locally trapped charge in dielectric stacked gate structures is demonstrated. The trapped charge distribution and concentration is calculated using the 2D Poisson equation. It is shown that a peak trapped charge density of around 1X1012cm-2 with a spreading of ∼250 nm is obtained using 15 V pulses a few milliseconds in duration.

AB - The Kelvin probe force microscopy (KPFM) which is used for quantitative measurements of locally trapped charge in dielectric stacked gate structures is demonstrated. The trapped charge distribution and concentration is calculated using the 2D Poisson equation. It is shown that a peak trapped charge density of around 1X1012cm-2 with a spreading of ∼250 nm is obtained using 15 V pulses a few milliseconds in duration.

UR - http://www.scopus.com/inward/record.url?scp=0036026367&partnerID=8YFLogxK

U2 - 10.1116/1.1502701

DO - 10.1116/1.1502701

M3 - Article

AN - SCOPUS:0036026367

SN - 1071-1023

VL - 20

SP - 1914

EP - 1917

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy

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