TY - JOUR
T1 - Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology
AU - De Marcellis, Andrea
AU - Cubells-Beltrán, María Dolores
AU - Reig, Candid
AU - Madrenas, Jordi
AU - Zadov, Boris
AU - Paperno, Eugene
AU - Cardoso, Susana
AU - Freitas, Paulo P.
N1 - Publisher Copyright:
© The Institution of Engineering and Technology 2014.
PY - 2014/7/1
Y1 - 2014/7/1
N2 - In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasidigital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 μm technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 μA have been resolved in this way.
AB - In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasidigital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 μm technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 μA have been resolved in this way.
UR - http://www.scopus.com/inward/record.url?scp=84926475424&partnerID=8YFLogxK
U2 - 10.1049/iet-cds.2013.0348
DO - 10.1049/iet-cds.2013.0348
M3 - Article
AN - SCOPUS:84926475424
SN - 1751-858X
VL - 8
SP - 291
EP - 300
JO - IET Circuits, Devices and Systems
JF - IET Circuits, Devices and Systems
IS - 4
ER -