Abstract
The interaction between the telegraph noise and background voltage fluctuations in current induced dissipative state of high-Tc BiSrCaCuO thin films has been investigated. Time records show markedly different background noise levels in up and down telegraph state. The detailed analysis has demonstrated that both levels fluctuate due to a unique background noise process. The apparent quiet and noisy voltage states are due to difference in the noise bandwidth of the telegraph levels. The bandwidth changes with bias current, following the changes of the average telegraph lifetime.
Original language | English |
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Pages | 325-328 |
Number of pages | 4 |
State | Published - 1 Dec 1997 |
Event | Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium Duration: 14 Jul 1997 → 18 Jul 1997 |
Conference
Conference | Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations |
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City | Leuven, Belgium |
Period | 14/07/97 → 18/07/97 |
ASJC Scopus subject areas
- General Engineering