Radiation defects induced by ion implantation as a promising method of doping semiconductor type AIVBIV films

Z. M. Dashevsky

Radiation defects induced by ion implantation as a promising method of doping semiconductor type A^IVB^IV films

Z. M. Dashevsky

Department of Materials Engineering

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Radiation defects in PbTe single crystals and epitaxial films induced by ion implantation of various impurities amounting to as much as 2·10⁴ μC/cm² have been investigated. It has been found that the formation of point defects (for the most part, Te vacancies) running as deep as 3 μm and more determine transport properties due to the stabilization of electron concentration at a level of 2÷4·10¹⁸ cm^-3. The data are interpreted based on the model of the quasi-local (doublet) energy level of Te vacancies in the PbTe conduction band. The formation of solid solutions accompanied by the increase of band gap was detected in PbTe thin layers implanted with Zn.

Original language	English
Pages	440-444
Number of pages	5
State	Published - 1 Jan 1996
Event	Proceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96 - Pasadena, CA, USA Duration: 26 Mar 1996 → 29 Mar 1996

Conference

Conference	Proceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96
City	Pasadena, CA, USA
Period	26/03/96 → 29/03/96

ASJC Scopus subject areas

General Engineering

Cite this

@conference{aa61f454d11c4702bdbca6350a770146,

title = "Radiation defects induced by ion implantation as a promising method of doping semiconductor type AIVBIV films",

abstract = "Radiation defects in PbTe single crystals and epitaxial films induced by ion implantation of various impurities amounting to as much as 2·104 μC/cm2 have been investigated. It has been found that the formation of point defects (for the most part, Te vacancies) running as deep as 3 μm and more determine transport properties due to the stabilization of electron concentration at a level of 2÷4·1018 cm-3. The data are interpreted based on the model of the quasi-local (doublet) energy level of Te vacancies in the PbTe conduction band. The formation of solid solutions accompanied by the increase of band gap was detected in PbTe thin layers implanted with Zn.",

author = "Dashevsky, {Z. M.}",

year = "1996",

month = jan,

day = "1",

language = "English",

pages = "440--444",

note = "Proceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96 ; Conference date: 26-03-1996 Through 29-03-1996",

}

TY - CONF

T1 - Radiation defects induced by ion implantation as a promising method of doping semiconductor type AIVBIV films

AU - Dashevsky, Z. M.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Radiation defects in PbTe single crystals and epitaxial films induced by ion implantation of various impurities amounting to as much as 2·104 μC/cm2 have been investigated. It has been found that the formation of point defects (for the most part, Te vacancies) running as deep as 3 μm and more determine transport properties due to the stabilization of electron concentration at a level of 2÷4·1018 cm-3. The data are interpreted based on the model of the quasi-local (doublet) energy level of Te vacancies in the PbTe conduction band. The formation of solid solutions accompanied by the increase of band gap was detected in PbTe thin layers implanted with Zn.

AB - Radiation defects in PbTe single crystals and epitaxial films induced by ion implantation of various impurities amounting to as much as 2·104 μC/cm2 have been investigated. It has been found that the formation of point defects (for the most part, Te vacancies) running as deep as 3 μm and more determine transport properties due to the stabilization of electron concentration at a level of 2÷4·1018 cm-3. The data are interpreted based on the model of the quasi-local (doublet) energy level of Te vacancies in the PbTe conduction band. The formation of solid solutions accompanied by the increase of band gap was detected in PbTe thin layers implanted with Zn.

UR - http://www.scopus.com/inward/record.url?scp=0029728333&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029728333

SP - 440

EP - 444

T2 - Proceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96

Y2 - 26 March 1996 through 29 March 1996

ER -

Radiation defects induced by ion implantation as a promising method of doping semiconductor type A^IVB^IV films

Abstract

Conference

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this