Radiation defects induced by ion implantation as a promising method of doping semiconductor type AIVBIV films

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Abstract

Radiation defects in PbTe single crystals and epitaxial films induced by ion implantation of various impurities amounting to as much as 2·104 μC/cm2 have been investigated. It has been found that the formation of point defects (for the most part, Te vacancies) running as deep as 3 μm and more determine transport properties due to the stabilization of electron concentration at a level of 2÷4·1018 cm-3. The data are interpreted based on the model of the quasi-local (doublet) energy level of Te vacancies in the PbTe conduction band. The formation of solid solutions accompanied by the increase of band gap was detected in PbTe thin layers implanted with Zn.

Original languageEnglish
Pages440-444
Number of pages5
StatePublished - 1 Jan 1996
EventProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96 - Pasadena, CA, USA
Duration: 26 Mar 199629 Mar 1996

Conference

ConferenceProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96
CityPasadena, CA, USA
Period26/03/9629/03/96

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