Radiation defects induced by ion implantation as a promising method of doping semiconductor type A^IVB^IV films

Engineering & Materials Science

• Semiconductor doping 100%
• Vacancies 89%
• Ion implantation 89%
• Electron transport properties 66%
• Conduction bands 56%
• Radiation 52%
• Point defects 50%
• Epitaxial films 50%
• Defects 45%
• Electron energy levels 38%
• Single crystals 38%
• Energy gap 37%
• Solid solutions 37%
• Electrons 33%
• Impurities 31%
• Stabilization 27%