Radiation effects in SnO2-Si sensor structures

V. Golovanov; L. Khirunenko; A. Kiv; D. Fuks; M. Soshin; G. Korotchenkov

doi:10.1080/10420150500493501

Radiation effects in SnO₂-Si sensor structures

V. Golovanov, L. Khirunenko, A. Kiv, D. Fuks, M. Soshin, G. Korotchenkov

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The radiation resistance of SnO₂-Si sensor structures irradiated by fast electrons and γ rays was studied. The radiation-induced structural changes were investigated using the Fourier transform infrared (FTIR) spectroscopy method. FTIR spectroscopy was used with grazing angles of light incidence on the surface of SnO₂-Si structure. New bands or any other modifications in spectra for irradiated SnO₂ films were not observed. It was found that SnO₂ films reveal a high resistance to irradiation while structural changes were observed in the silicon substrate.

Original language	English
Pages (from-to)	85-89
Number of pages	5
Journal	Radiation Effects and Defects in Solids
Volume	161
Issue number	2
DOIs	https://doi.org/10.1080/10420150500493501
State	Published - 1 Feb 2006

Keywords

Infrared spectroscopy
Irradiation
Sensors
Tin oxide

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
General Materials Science
Condensed Matter Physics

Access to Document

10.1080/10420150500493501

Cite this

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AU - Golovanov, V.

AU - Khirunenko, L.

AU - Kiv, A.

AU - Fuks, D.

AU - Soshin, M.

AU - Korotchenkov, G.

PY - 2006/2/1

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AB - The radiation resistance of SnO2-Si sensor structures irradiated by fast electrons and γ rays was studied. The radiation-induced structural changes were investigated using the Fourier transform infrared (FTIR) spectroscopy method. FTIR spectroscopy was used with grazing angles of light incidence on the surface of SnO2-Si structure. New bands or any other modifications in spectra for irradiated SnO2 films were not observed. It was found that SnO2 films reveal a high resistance to irradiation while structural changes were observed in the silicon substrate.

KW - Infrared spectroscopy

KW - Irradiation

KW - Sensors

KW - Tin oxide

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