Radiation sensor based on a floating gate device

E. Pikhay, Y. Nemirovsky, Y. Roizin, V. Dayan, K. Lavrenkov, Y. Leibovich, D. Epstein

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Ionizing radiation sensor based on the nonvolatile floating gate (FG) C-Flash memory is demonstrated. The sensing is based on measuring the threshold voltage (Vt) shift of the modified C-Flash cell pre-charged by electrons or holes. The accumulated absorbed dose is calculated from the Vt shift of the memory cell after the exposure to radiation. The developed sensor is a candidate for embedding into passive RFID radiation measuring systems. It features ultra-low power operation and does not require power supply during the exposure sessions. The feasibility results for stand-alone sensors and 2kbit test arrays are presented and discussed in view of possible applications.

Original languageEnglish
Title of host publication2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012
DOIs
StatePublished - 1 Dec 2012
Externally publishedYes
Event2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012 - Eilat, Israel
Duration: 14 Nov 201217 Nov 2012

Publication series

Name2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012

Conference

Conference2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012
Country/TerritoryIsrael
CityEilat
Period14/11/1217/11/12

Keywords

  • NVM
  • floating gate
  • radiation sensor

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