Radiation-stimulated diffusion in Al-Si alloys

A. Kiv, D. Fuks, A. Munitz, V. Zenou, N. Moiseenko

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A di-vacancy low-temperature diffusion is proposed to explain diffusion-controlled processes in Al-Si alloys responsible for neutron-induced silicon precipitation. Ab initio calculations of potential barriers for Si atom hopping in aluminium lattice showed that in the case of di-vacancy diffusion, they are small compared with that of mono-vacancy diffusion. The low temperature diffusivity of mono-vacancies is too small to account for the measured Si diffusivities in aluminium. The dependencies of radiation-stimulated diffusion on the neutron flux and on the temperature are obtained and can be used for the experimental verification of the developed model.

Original languageEnglish
Pages (from-to)59-67
Number of pages9
JournalRadiation Effects and Defects in Solids
Issue number2
StatePublished - 1 Feb 2007


  • Di-vacancy diffusion
  • Neutron-stimulated diffusion


Dive into the research topics of 'Radiation-stimulated diffusion in Al-Si alloys'. Together they form a unique fingerprint.

Cite this