Radiation-stimulated diffusion in Al-Si alloys

A. Kiv; D. Fuks; A. Munitz; V. Zenou; N. Moiseenko

doi:10.1080/10420150601054277

Radiation-stimulated diffusion in Al-Si alloys

A. Kiv
, D. Fuks
, A. Munitz
, V. Zenou
, N. Moiseenko

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A di-vacancy low-temperature diffusion is proposed to explain diffusion-controlled processes in Al-Si alloys responsible for neutron-induced silicon precipitation. Ab initio calculations of potential barriers for Si atom hopping in aluminium lattice showed that in the case of di-vacancy diffusion, they are small compared with that of mono-vacancy diffusion. The low temperature diffusivity of mono-vacancies is too small to account for the measured Si diffusivities in aluminium. The dependencies of radiation-stimulated diffusion on the neutron flux and on the temperature are obtained and can be used for the experimental verification of the developed model.

Original language	English
Pages (from-to)	59-67
Number of pages	9
Journal	Radiation Effects and Defects in Solids
Volume	162
Issue number	2
DOIs	https://doi.org/10.1080/10420150601054277
State	Published - 1 Feb 2007

Keywords

Di-vacancy diffusion
Neutron-stimulated diffusion

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
General Materials Science
Condensed Matter Physics

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10.1080/10420150601054277

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@article{c0aada3760a94687b025c5563a778772,

title = "Radiation-stimulated diffusion in Al-Si alloys",

abstract = "A di-vacancy low-temperature diffusion is proposed to explain diffusion-controlled processes in Al-Si alloys responsible for neutron-induced silicon precipitation. Ab initio calculations of potential barriers for Si atom hopping in aluminium lattice showed that in the case of di-vacancy diffusion, they are small compared with that of mono-vacancy diffusion. The low temperature diffusivity of mono-vacancies is too small to account for the measured Si diffusivities in aluminium. The dependencies of radiation-stimulated diffusion on the neutron flux and on the temperature are obtained and can be used for the experimental verification of the developed model.",

keywords = "Di-vacancy diffusion, Neutron-stimulated diffusion",

author = "A. Kiv and D. Fuks and A. Munitz and V. Zenou and N. Moiseenko",

year = "2007",

month = feb,

day = "1",

doi = "10.1080/10420150601054277",

language = "English",

volume = "162",

pages = "59--67",

journal = "Radiation Effects and Defects in Solids",

issn = "1042-0150",

publisher = "Taylor and Francis Ltd.",

number = "2",

}

TY - JOUR

T1 - Radiation-stimulated diffusion in Al-Si alloys

AU - Kiv, A.

AU - Fuks, D.

AU - Munitz, A.

AU - Zenou, V.

AU - Moiseenko, N.

PY - 2007/2/1

Y1 - 2007/2/1

N2 - A di-vacancy low-temperature diffusion is proposed to explain diffusion-controlled processes in Al-Si alloys responsible for neutron-induced silicon precipitation. Ab initio calculations of potential barriers for Si atom hopping in aluminium lattice showed that in the case of di-vacancy diffusion, they are small compared with that of mono-vacancy diffusion. The low temperature diffusivity of mono-vacancies is too small to account for the measured Si diffusivities in aluminium. The dependencies of radiation-stimulated diffusion on the neutron flux and on the temperature are obtained and can be used for the experimental verification of the developed model.

AB - A di-vacancy low-temperature diffusion is proposed to explain diffusion-controlled processes in Al-Si alloys responsible for neutron-induced silicon precipitation. Ab initio calculations of potential barriers for Si atom hopping in aluminium lattice showed that in the case of di-vacancy diffusion, they are small compared with that of mono-vacancy diffusion. The low temperature diffusivity of mono-vacancies is too small to account for the measured Si diffusivities in aluminium. The dependencies of radiation-stimulated diffusion on the neutron flux and on the temperature are obtained and can be used for the experimental verification of the developed model.

KW - Di-vacancy diffusion

KW - Neutron-stimulated diffusion

UR - https://www.scopus.com/pages/publications/33847115665

U2 - 10.1080/10420150601054277

DO - 10.1080/10420150601054277

M3 - Article

AN - SCOPUS:33847115665

SN - 1042-0150

VL - 162

SP - 59

EP - 67

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

IS - 2

ER -

Radiation-stimulated diffusion in Al-Si alloys

Abstract

Keywords

ASJC Scopus subject areas

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