Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides

Naor Vardi, Elihu Anouchi, Tony Yamin, Srimanta Middey, Michael Kareev, Jak Chakhalian, Yonatan Dubi, Amos Sharoni

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Transition metal oxides are complex electronic systems that exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal–insulator phase transition (MIT), the origin of which is still under debate. Here this study reports the discovery of a memory effect in both systems, manifested through an increase of resistance at a specific temperature, which is set by reversing the temperature ramp from heating to cooling during the MIT. The characteristics of this ramp-reversal memory effect do not coincide with any previously reported history or memory effects in manganites, electron-glass or magnetic systems. From a broad range of experimental features, supported by theoretical modelling, it is found that the main ingredients for the effect to arise are the spatial phase separation of metallic and insulating regions during the MIT and the coupling of lattice strain to the local transition temperature of the phase transition. We conclude that the emergent memory effect originates from phase boundaries at the reversal temperature leaving “scars” in the underlying lattice structure, giving rise to a local increase in the transition temperature. The universality and robustness of the effect shed new light on the MIT in complex oxides.

Original languageEnglish
Article number1605029
JournalAdvanced Materials
Volume29
Issue number21
DOIs
StatePublished - 6 Jun 2017

Keywords

  • emergent phenomena
  • memory devices
  • metal insulator transition
  • transition metal oxides
  • transport properties

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