Random telegraph signals and low-frequency voltage noise in Y-Ba-Cu-O thin films

Excess low-frequency noise extending to MHz frequencies was observed in dc current biased granular high-T_c thin films. At particular bias conditions random telegraph signal produced by a single, fast two-level fluctuator dominated the noise properties of the sample. Lifetimes of the low- and high-voltage states of the fluctuating system were found to be exponentially distributed. Power spectra of the excess noise signal could be well fitted with a single Lorentzian contribution. Duty cycle dependence of the random telegraph signal on bias conditions was used to get an insight into physical mechanism causing the fluctuations. Charge trapping events in the intergranular intrinsic Josephson junctions and trapped flux hopping were identified as possible alternative sources of the observed noise.