Rank modulation for flash memories

Anxiao Jiang, Robert Mateescu, Moshe Schwartz, Jehoshua Bruck

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

50 Scopus citations

Abstract

We explore a novel data representation scheme for multi-level flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top" operation which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only "push-to-the-top" operations, and also construct balanced Gray codes. We also investigate optimal rewriting schemes for translating arbitrary input alphabet into n-cell states which minimize the number of programming operations.

Original languageEnglish
Title of host publicationProceedings - 2008 IEEE International Symposium on Information Theory, ISIT 2008
Pages1731-1735
Number of pages5
DOIs
StatePublished - 29 Sep 2008
Event2008 IEEE International Symposium on Information Theory, ISIT 2008 - Toronto, ON, Canada
Duration: 6 Jul 200811 Jul 2008

Publication series

NameIEEE International Symposium on Information Theory - Proceedings
ISSN (Print)2157-8101

Conference

Conference2008 IEEE International Symposium on Information Theory, ISIT 2008
Country/TerritoryCanada
CityToronto, ON
Period6/07/0811/07/08

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