TY - JOUR
T1 - Rank modulation for flash memories
AU - Jiang, Anxiao
AU - Mateescu, Robert
AU - Schwartz, Mosche
AU - Bruck, Jehoshua
N1 - Funding Information:
Manuscript received September 18, 2008; revised January 28, 2009. Current version published May 20, 2009. This work was supported in part by the Caltech Lee Center for Advanced Networking, by the National Science Foundation (NSF) under Grant ECCS-0802107 and the NSF CAREER Award 0747415 , by the GIF under Grant 2179-1785.10/2007, by the NSF-NRI, and by a gift from Ross Brown. The material in this paper was presented in part at the IEEE International Symposium on Information Theory, Toronto, ON, Canada, July 2008 A. Jiang is with the Department of Computer Science, Texas A&M University, College Station, TX 77843-3112 USA (e-mail: [email protected]).
PY - 2009/6/17
Y1 - 2009/6/17
N2 - We explore a novel data representation scheme for multilevel flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top"operation, which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only "push-to-the-top" operations, and also construct balanced Gray codes. One important application of the Gray codes is the realization of logic multilevel cells, which is useful in conventional storage solutions. We also investigate rewriting schemes for random data modification.We present both an optimal scheme for the worst case rewrite performance and an approximation scheme for the average-case rewrite performance.
AB - We explore a novel data representation scheme for multilevel flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top"operation, which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only "push-to-the-top" operations, and also construct balanced Gray codes. One important application of the Gray codes is the realization of logic multilevel cells, which is useful in conventional storage solutions. We also investigate rewriting schemes for random data modification.We present both an optimal scheme for the worst case rewrite performance and an approximation scheme for the average-case rewrite performance.
KW - Asymmetric channel
KW - Flash memory
KW - Gray codes
KW - Permutations
KW - Rank modulation
UR - https://www.scopus.com/pages/publications/66949120714
U2 - 10.1109/TIT.2009.2018336
DO - 10.1109/TIT.2009.2018336
M3 - Article
AN - SCOPUS:66949120714
SN - 0018-9448
VL - 55
SP - 2659
EP - 2673
JO - IEEE Transactions on Information Theory
JF - IEEE Transactions on Information Theory
IS - 6
ER -