Rational designed hierarchical dual carbon protected ZnSe anode for advanced sodium-ion hybrid capacitors

Litong Zhang, Hongan Zhao, Liming Dai, Fanglei Yao, Yin Huang, Wenkang Xue, Junwu Zhu, Jingwen Sun

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

With a remarkable advantage of high theoretical capacity and excellent rate performance, zinc selenide (ZnSe) has been regarded as a high-potential electrode for sodium-ion batteries (SIBs). Nevertheless, the practical use of ZnSe as the anode for SIBs is severely limited by the large volumetric expansion and sluggish kinetics during the conversion/alloying reaction process. Herein, we develop a dual-type carbon approach to afford a 3D hierarchical ZnSe@N-doped carbon/reduced graphene oxide (ZnSe@NC/rGO) using simple selenization of ZIF-8 and subsequent incorporation process. Alongside with buffering the volume variation by the in-situ generated NC, the electron and ion transfer can also be accelerated on account of the interconnected graphene network. Therefore, the ZnSe@NC/rGO offers a splendid discharge capacity of 455.3 mAh g−1 at 0.1 A g−1, and exhibits a superior rate capability of 195.1 mAh g−1 at 5 A g−1. Besides, the capacity retains as high as 170.1 mAh g−1 after 500 cycles at 5 A g−1, indicating an outstanding cyclic ability. A full-cell sodium ion hybrid capacitor (SIHC) constructed using a ZnSe@NC/rGO anode and a commercial activated carbon (AC) cathode (ZnSe@NC/rGO//AC SIHC) shows a high energy output of 117.8 Wh kg−1 at 105 W kg−1, and a long lifespan with 86.4% capacity retention over 3000 cycles.

Original languageEnglish
Article number104970
JournalJournal of Energy Storage
Volume52
DOIs
StatePublished - 25 Aug 2022
Externally publishedYes

Keywords

  • Dual-type carbon protection
  • Graphene sheets
  • N-doped carbon
  • Sodium ion storage
  • Zinc selenide

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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