Abstract
The reaction-bonding technique was used to synthesize boron carbide (B4C) - silicon carbide (SiC) composites by microwave heating. Preforms of porous B4C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400-1500°C, t: 5-120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15-19 GPa) for a much lower density (≈2.5 g/cm3 for B4C-based material instead of 3.95 g/cm3 for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.
Original language | English |
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Pages (from-to) | 1287-1294 |
Number of pages | 8 |
Journal | International Journal of Applied Ceramic Technology |
Volume | 16 |
Issue number | 4 |
DOIs | |
State | Published - 1 Jul 2019 |
Keywords
- boron carbide
- microwaves
- reaction bonding
ASJC Scopus subject areas
- Ceramics and Composites
- Condensed Matter Physics
- Marketing
- Materials Chemistry