Reaction-bonded B4C/SiC composites synthesized by microwave heating

Mathieu Dutto, Dominique Goeuriot, Sébastien Saunier, Sylvain Marinel, Nachum Frage, Shmuel Hayun

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The reaction-bonding technique was used to synthesize boron carbide (B4C) - silicon carbide (SiC) composites by microwave heating. Preforms of porous B4C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400-1500°C, t: 5-120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15-19 GPa) for a much lower density (≈2.5 g/cm3 for B4C-based material instead of 3.95 g/cm3 for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.

Original languageEnglish
Pages (from-to)1287-1294
Number of pages8
JournalInternational Journal of Applied Ceramic Technology
Volume16
Issue number4
DOIs
StatePublished - 1 Jul 2019

Keywords

  • boron carbide
  • microwaves
  • reaction bonding

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