TY - JOUR
T1 - Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength
AU - Snyman, Lukas W.
AU - Ogudo, Kingsley A.
AU - Tegnege, Zerihun G.
AU - Polleux, Jean Luc
AU - Billabert, Anne Laure
AU - Aharoni, Herzl
N1 - Funding Information:
The test structure as demonstrated was realized in association with Université Paris Est, ESYCOM, ESIEE Paris, France. The utilization of advanced RF characterization facilities at this institution was therefore gratefully acknowledged. Dr. Zerihun Tegnegne and Carlos Viana from ESIEE would like to also thoroughly thank for their assistance with the RF characterization as demonstrated in this work. The content in this article forms the subject of recent PCT Patent Application PCT/ZA2010/00032 of June 2010, “An all-silicon 750 nm (submicron) CMOS and SOI-based optical communication system,” PCT Patent Application PCT/ZA2010/00033 of June 2010 “MOEMS sensor device” (Several priority patents); PCT Patent Application PCT/ZA2010/00031 of June 2010, “Wavelength specific Si LED light emitting structures and arrays,” and “650 nm Silicon Avalanche Light Emitting Diode,” PCT/ZA2017/050052, University of South Africa in 2018. These all deal with our latest technology definitions about Si Av LED CMOS-based optical communication systems, Si Av LED design, CMOS waveguide design, CMOS modulator, and switch design, CMOS-based data transfer systems, CMOS microphotonic system, and Micro-Opto-Electro-Mechanical Systems sensors design. All the patents as listed are currently assigned to Tshwane University of Technology and the University of South Africa. Collaboration and commercialization of the developed technologies are encouraged by interested third parties. The funders had no role in the design of the study; in the collection, analyses, or interpretation of data; in the writing of the manuscript, or in the decision to publish the results. This research received external funding from the South African National Research Foundation (Grant No. FA200604110043), NRF KIC (Grant No. UID 87297) and SANRF travel block grants. This work was also partly supported by the French government in the framework of the FUI8 ORIGIN project (Optical-Radio Infrastructure for Gigabit/s Indoor Networks). The study was conducted according to the guidelines of the declaration of Helsinki of the local college Institutional Review Board and Ethics Committee of University of South Africa. –
Publisher Copyright:
© 2022 The Authors.
PY - 2022/12/1
Y1 - 2022/12/1
N2 - A series of on-chip optical links of 50-μm length, utilizing 650 to 850 nm propagation wavelength, with Si avalanche-mode optical sources, silicon nitride-based waveguides, and Si Ge detectors, have been designed and realized, with a 0.35-μm SiGe radio frequency bipolar integrated circuit process. The optical coupling between the optical source and the detectors was realized by a set of dedicated designed optical waveguides, which were all fabricated with components of the SiGe radio frequency process. All components were fully integrated on the same silicon chip. The Si avalanche-mode light-emitting diodes (Si AMLEDs) emitted in the 650- to 850-nm wavelength regime. Correspondingly, small microdimensioned detectors utilize SiGe detector technology with detection efficiencies of up to 0.85 in the same wavelength regime and with a transition frequency of up to 20 GHz. Best performances for the optical links as realized show optical coupling of up to 5 GHz with a total optical link budget loss of -40 dB. A set of link results are presented and several interpretations are given on current realizations. The technology is particularly suitable for realization of low-cost on-chip optical signal processing, optical interconnects, and various types of on-chip microsensors.
AB - A series of on-chip optical links of 50-μm length, utilizing 650 to 850 nm propagation wavelength, with Si avalanche-mode optical sources, silicon nitride-based waveguides, and Si Ge detectors, have been designed and realized, with a 0.35-μm SiGe radio frequency bipolar integrated circuit process. The optical coupling between the optical source and the detectors was realized by a set of dedicated designed optical waveguides, which were all fabricated with components of the SiGe radio frequency process. All components were fully integrated on the same silicon chip. The Si avalanche-mode light-emitting diodes (Si AMLEDs) emitted in the 650- to 850-nm wavelength regime. Correspondingly, small microdimensioned detectors utilize SiGe detector technology with detection efficiencies of up to 0.85 in the same wavelength regime and with a transition frequency of up to 20 GHz. Best performances for the optical links as realized show optical coupling of up to 5 GHz with a total optical link budget loss of -40 dB. A set of link results are presented and several interpretations are given on current realizations. The technology is particularly suitable for realization of low-cost on-chip optical signal processing, optical interconnects, and various types of on-chip microsensors.
KW - electroluminescence
KW - light emitting diodes
KW - optical communication
KW - optical detectors
KW - optical wave-guiding
KW - silicon
KW - silicon integrated circuitry
UR - http://www.scopus.com/inward/record.url?scp=85147541968&partnerID=8YFLogxK
U2 - 10.1117/1.OE.61.12.125109
DO - 10.1117/1.OE.61.12.125109
M3 - Article
AN - SCOPUS:85147541968
SN - 0091-3286
VL - 61
JO - Optical Engineering
JF - Optical Engineering
IS - 12
M1 - 125109
ER -