Redistribution phenomenon of residual impurities in undoped GaAs epitaxial layers grown by MOCVD as a function of growth time

Research output: Contribution to journalArticlepeer-review

Fingerprint

Dive into the research topics of 'Redistribution phenomenon of residual impurities in undoped GaAs epitaxial layers grown by MOCVD as a function of growth time'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds

Physics & Astronomy