Reduction of oxygen contamination in AlN

J. Salzman; S. Prawer; B. Meyler; Y. Golan; M. Shandalov; R. Sauer; N. Teofilov

doi:10.1002/pssc.200303387

Reduction of oxygen contamination in AlN

J. Salzman, S. Prawer, B. Meyler, Y. Golan, M. Shandalov, R. Sauer, N. Teofilov

Department of Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

High quality AlN thin films were grown by Low Pressure Organometallic Vapor Phase Epitaxy (LP-OMVPE) on sapphire and Si substrates. oxygen contamination in the Al layers can be reduced drastically by fine tuning of the growth parameters, by avoiding O-containing substrates, and by using a cap GaN layer. AlN films grown on Si, exhibiting oxygen concentration levels of [O] ≤ 10¹⁹ cm^-3, display an X-Ray Diffraction Full Width Half Maximum (FWHM) of 190 arcsec and an extremely sharp near bandedge cathodoluminescence emission at 5.925 eV with FWHM of 30 meV and 5.975 eV (unresolved).

Original language	English
Pages (from-to)	2541-2544
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303387
State	Published - 1 Dec 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 25 May 2003 → 30 May 2003

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200303387

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title = "Reduction of oxygen contamination in AlN",

abstract = "High quality AlN thin films were grown by Low Pressure Organometallic Vapor Phase Epitaxy (LP-OMVPE) on sapphire and Si substrates. oxygen contamination in the Al layers can be reduced drastically by fine tuning of the growth parameters, by avoiding O-containing substrates, and by using a cap GaN layer. AlN films grown on Si, exhibiting oxygen concentration levels of [O] ≤ 1019 cm-3, display an X-Ray Diffraction Full Width Half Maximum (FWHM) of 190 arcsec and an extremely sharp near bandedge cathodoluminescence emission at 5.925 eV with FWHM of 30 meV and 5.975 eV (unresolved).",

author = "J. Salzman and S. Prawer and B. Meyler and Y. Golan and M. Shandalov and R. Sauer and N. Teofilov",

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doi = "10.1002/pssc.200303387",

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TY - JOUR

T1 - Reduction of oxygen contamination in AlN

AU - Salzman, J.

AU - Prawer, S.

AU - Meyler, B.

AU - Golan, Y.

AU - Shandalov, M.

AU - Sauer, R.

AU - Teofilov, N.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - High quality AlN thin films were grown by Low Pressure Organometallic Vapor Phase Epitaxy (LP-OMVPE) on sapphire and Si substrates. oxygen contamination in the Al layers can be reduced drastically by fine tuning of the growth parameters, by avoiding O-containing substrates, and by using a cap GaN layer. AlN films grown on Si, exhibiting oxygen concentration levels of [O] ≤ 1019 cm-3, display an X-Ray Diffraction Full Width Half Maximum (FWHM) of 190 arcsec and an extremely sharp near bandedge cathodoluminescence emission at 5.925 eV with FWHM of 30 meV and 5.975 eV (unresolved).

AB - High quality AlN thin films were grown by Low Pressure Organometallic Vapor Phase Epitaxy (LP-OMVPE) on sapphire and Si substrates. oxygen contamination in the Al layers can be reduced drastically by fine tuning of the growth parameters, by avoiding O-containing substrates, and by using a cap GaN layer. AlN films grown on Si, exhibiting oxygen concentration levels of [O] ≤ 1019 cm-3, display an X-Ray Diffraction Full Width Half Maximum (FWHM) of 190 arcsec and an extremely sharp near bandedge cathodoluminescence emission at 5.925 eV with FWHM of 30 meV and 5.975 eV (unresolved).

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U2 - 10.1002/pssc.200303387

DO - 10.1002/pssc.200303387

M3 - Conference article

AN - SCOPUS:33846409548

SN - 1610-1634

SP - 2541

EP - 2544

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Reduction of oxygen contamination in AlN

Abstract

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