Reduction of oxygen contamination in AlN

J. Salzman, S. Prawer, B. Meyler, Y. Golan, M. Shandalov, R. Sauer, N. Teofilov

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


High quality AlN thin films were grown by Low Pressure Organometallic Vapor Phase Epitaxy (LP-OMVPE) on sapphire and Si substrates. oxygen contamination in the Al layers can be reduced drastically by fine tuning of the growth parameters, by avoiding O-containing substrates, and by using a cap GaN layer. AlN films grown on Si, exhibiting oxygen concentration levels of [O] ≤ 1019 cm-3, display an X-Ray Diffraction Full Width Half Maximum (FWHM) of 190 arcsec and an extremely sharp near bandedge cathodoluminescence emission at 5.925 eV with FWHM of 30 meV and 5.975 eV (unresolved).

Original languageEnglish
Pages (from-to)2541-2544
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
StatePublished - 1 Dec 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 25 May 200330 May 2003

ASJC Scopus subject areas

  • Condensed Matter Physics


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