High quality AlN thin films were grown by Low Pressure Organometallic Vapor Phase Epitaxy (LP-OMVPE) on sapphire and Si substrates. oxygen contamination in the Al layers can be reduced drastically by fine tuning of the growth parameters, by avoiding O-containing substrates, and by using a cap GaN layer. AlN films grown on Si, exhibiting oxygen concentration levels of [O] ≤ 1019 cm-3, display an X-Ray Diffraction Full Width Half Maximum (FWHM) of 190 arcsec and an extremely sharp near bandedge cathodoluminescence emission at 5.925 eV with FWHM of 30 meV and 5.975 eV (unresolved).
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|State||Published - 1 Dec 2003|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: 25 May 2003 → 30 May 2003
ASJC Scopus subject areas
- Condensed Matter Physics