Reduction of oxygen contamination in AlN

Keyphrases

• Oxygen Reduction 100%
• Full Width at Half Maximum 100%
• Oxygen Contamination 100%
• Oxygen Concentration 50%
• X Ray Diffraction 50%
• Growth Parameters 50%
• Low Pressure 50%
• Cathodoluminescence 50%
• Cm(III) 50%
• GaN Layers 50%
• Sapphire Substrate 50%
• Concentration Level 50%
• Si Substrate 50%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 50%
• AlN Film 50%
• AlN Thin Film 50%

Engineering

• Thin Films 100%
• Oxygen Concentration 100%
• Ray Diffraction 100%
• Growth Parameter 100%
• Sapphire Substrate 100%
• Si Substrate 100%

Material Science

• Aluminum Nitride 100%
• Film 33%
• Sapphire 33%
• Thin Films 33%
• X-Ray Diffraction 33%
• Cathodoluminescence 33%
• Vapor Phase Epitaxy 33%