Relationship between InGaAs channel layer thickness and device performance in high electron mobility transistors

M. Meshkinpour, M. S. Goorsky, D. C. Streit, T. Block, M. Mojtowicz, K. Rammohan, D. H. Rich

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The performance of InGaAs/GaAs pseudomorphic high electron mobility transistors is anticipated to improve with increased channel thickness due to reduced effects of quantum confinement. However, greater channel thicknesses increase the probability of forming misfit dislocations which have been reported to impair device properties. We characterized the composition and thickness of the active layer in Al0.25Ga0.75As/ In0.21Ga0.79As structures with different channel thicknesses (75 angstrom - 300 angstrom) to within ± 0.005 and ± 8 angstrom using high resolution x-ray techniques. We determined, using Hall and rf measurements, that the device properties of these structures improved with increasing thickness up to about 185-205 angstrom; degraded properties were observed for thicker channel layers. Cathodoluminescence results indicate that the mosaic spread observed in x-ray triple axis rocking curves of these device structures is due to the presence of misfit dislocations. Thus, even though misfit dislocations are present, the device structure performs best with a channel thickness of approx.185 angstrom. These results demonstrate that one can fabricate functional devices in excess of critical thickness considerations, and that these x-ray techniques provide an effective means to evaluate structural properties prior to device processing.

Original languageEnglish
Pages (from-to)327-332
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume340
DOIs
StatePublished - 1 Jan 1994
Externally publishedYes
EventProceedings of the MRS Symposium - San Francisco, CA, USA
Duration: 4 Apr 19947 Apr 1994

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