Relationship between InGaAs channel layer thickness and device performance in high electron mobility transistors

M. Meshkinpour, M. S. Goorsky, D. C. Streit, T. Block, M. Mojtowicz, K. Rammohan, D. H. Rich

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

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Engineering

Material Science

Physics