We have investigated local variations in the optical properties of In0.06Ga0.94As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the In0.06Ga0.94As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.
ASJC Scopus subject areas
- Condensed Matter Physics