Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001)

K. Rammohan, Y. Tang, D. H. Rich, R. S. Goldman, H. H. Wieder, K. L. Kavanagh

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


We have investigated local variations in the optical properties of In0.06Ga0.94As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the In0.06Ga0.94As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.

Original languageEnglish
Pages (from-to)5033-5037
Number of pages5
JournalPhysical Review B
Issue number8
StatePublished - 1 Jan 1995
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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