Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001)

K. Rammohan; Y. Tang; D. H. Rich; R. S. Goldman; H. H. Wieder; K. L. Kavanagh

doi:10.1103/PhysRevB.51.5033

Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001)

K. Rammohan
, Y. Tang
, D. H. Rich
, R. S. Goldman
, H. H. Wieder
, K. L. Kavanagh

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We have investigated local variations in the optical properties of In0.06Ga0.94As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the In0.06Ga0.94As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.

Original language	English
Pages (from-to)	5033-5037
Number of pages	5
Journal	Physical Review B-Condensed Matter
Volume	51
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.51.5033
State	Published - 1 Jan 1995
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.51.5033

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title = "Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001)",

abstract = "We have investigated local variations in the optical properties of In0.06Ga0.94As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the In0.06Ga0.94As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.",

author = "K. Rammohan and Y. Tang and Rich, \{D. H.\} and Goldman, \{R. S.\} and Wieder, \{H. H.\} and Kavanagh, \{K. L.\}",

year = "1995",

month = jan,

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doi = "10.1103/PhysRevB.51.5033",

language = "English",

volume = "51",

pages = "5033--5037",

journal = "Physical Review B-Condensed Matter",

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publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001)

AU - Rammohan, K.

AU - Tang, Y.

AU - Rich, D. H.

AU - Goldman, R. S.

AU - Wieder, H. H.

AU - Kavanagh, K. L.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We have investigated local variations in the optical properties of In0.06Ga0.94As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the In0.06Ga0.94As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.

AB - We have investigated local variations in the optical properties of In0.06Ga0.94As/GaAs using linearly polarized cathodoluminescence imaging and spectroscopy. The influence of substrate misorientation on the polarization anisotropy of excitonic luminescence in the In0.06Ga0.94As films was examined. Local variations in excitonic polarization anisotropy and emission energy are found to correlate spatially with dark line defects which result from the formation of interfacial misfit dislocations.

UR - https://www.scopus.com/pages/publications/4243774787

U2 - 10.1103/PhysRevB.51.5033

DO - 10.1103/PhysRevB.51.5033

M3 - Article

AN - SCOPUS:4243774787

SN - 0163-1829

VL - 51

SP - 5033

EP - 5037

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 8

ER -

Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001)

Abstract

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