Response of silicon diode dosemeters to scattered radiation from megavoltage photon beams

Z. Yin; R. P. Hugtenburg; A. H. Beddoe; Y. S. Horowitz; L. Oster

doi:10.1093/oxfordjournals.rpd.a006014

Response of silicon diode dosemeters to scattered radiation from megavoltage photon beams

Z. Yin, R. P. Hugtenburg, A. H. Beddoe, Y. S. Horowitz, L. Oster

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Dose response effects of diodes due to the high atomic number of silicon relative to water are investigated. While quality changes in the primary component of a megavoltage beam with depth are minimal, Compton scattered photons are shown to have a substantial effect on the quality leading to their enhanced absorption in silicon via the photoelectric effect. Monte Carlo methods were used to study and model this phenomenon. Measurements of dose rate, depth and field size dependence are examined for commercially available diode detectors and ionisation chambers.

Original language	English
Pages (from-to)	415-418
Number of pages	4
Journal	Radiation Protection Dosimetry
Volume	101
Issue number	1-4
DOIs	https://doi.org/10.1093/oxfordjournals.rpd.a006014
State	Published - 1 Jan 2002

ASJC Scopus subject areas

Radiation
Radiological and Ultrasound Technology
Radiology Nuclear Medicine and imaging
Public Health, Environmental and Occupational Health

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10.1093/oxfordjournals.rpd.a006014

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abstract = "Dose response effects of diodes due to the high atomic number of silicon relative to water are investigated. While quality changes in the primary component of a megavoltage beam with depth are minimal, Compton scattered photons are shown to have a substantial effect on the quality leading to their enhanced absorption in silicon via the photoelectric effect. Monte Carlo methods were used to study and model this phenomenon. Measurements of dose rate, depth and field size dependence are examined for commercially available diode detectors and ionisation chambers.",

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AU - Oster, L.

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AB - Dose response effects of diodes due to the high atomic number of silicon relative to water are investigated. While quality changes in the primary component of a megavoltage beam with depth are minimal, Compton scattered photons are shown to have a substantial effect on the quality leading to their enhanced absorption in silicon via the photoelectric effect. Monte Carlo methods were used to study and model this phenomenon. Measurements of dose rate, depth and field size dependence are examined for commercially available diode detectors and ionisation chambers.

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Response of silicon diode dosemeters to scattered radiation from megavoltage photon beams

Abstract

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