Response of silicon diode dosemeters to scattered radiation from megavoltage photon beams

Z. Yin, R. P. Hugtenburg, A. H. Beddoe, Y. S. Horowitz, L. Oster

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Dose response effects of diodes due to the high atomic number of silicon relative to water are investigated. While quality changes in the primary component of a megavoltage beam with depth are minimal, Compton scattered photons are shown to have a substantial effect on the quality leading to their enhanced absorption in silicon via the photoelectric effect. Monte Carlo methods were used to study and model this phenomenon. Measurements of dose rate, depth and field size dependence are examined for commercially available diode detectors and ionisation chambers.

Original languageEnglish
Pages (from-to)415-418
Number of pages4
JournalRadiation Protection Dosimetry
Volume101
Issue number1-4
DOIs
StatePublished - 1 Jan 2002

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