Responsivity of gated photodiode in SOS technology

Alexander Fish, Orly Yadid-Pecht, Eugenio Culurciello

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We report on the responsivity of Silicon-on-Sapphire (SOS) gated photodiode. A test chip, consisting of 1024 photodetectors, connected in parallel, was fabricated in a Peregrine's 0.5μ SOS technology and successfully tested by direct photocurrent measurements. We include measurements from a test chip, showing photocurrent dependence on reverse applied voltage, incident illumination intensities and light wavelengths. Dark current measurements are also reported. The measurement results are compared with recently presented PIN photodiodes showing that the gated photodiode can be an appropriate candidate for further implementation in image sensor arrays.

Original languageEnglish
Title of host publicationThe 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Pages527-530
Number of pages4
DOIs
StatePublished - 1 Dec 2007
Event6th IEEE Conference on SENSORS, IEEE SENSORS 2007 - Atlanta, GA, United States
Duration: 28 Oct 200731 Oct 2007

Publication series

NameProceedings of IEEE Sensors

Conference

Conference6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Country/TerritoryUnited States
CityAtlanta, GA
Period28/10/0731/10/07

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