Ring-shaped N+/P-well photodiode: Study of responsivity enhancement

Tatiana Danov; Igor Shcherback; Orly Yadid-Pecht

Ring-shaped N+/P-well photodiode: Study of responsivity enhancement

Tatiana Danov, Igor Shcherback, Orly Yadid-Pecht

Department of Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work the possibilities of CMOS APS spectral response improvement is discussed. Thorough submicron scanning results obtained from various ring-shaped pixel photodiodes with different inner radius, implemented in a standard CMOS 0.35μm technology, are compared with numerical computer simulations. The functional dependence of the pixel response on the ring opening size was discovered and formulated for various wavelengths illumination. We show that the photodiodes with small ring-opening exhibit better sensitivity in the blue spectrum range (420-460 nm). Comparison between the simulation and measurement results shows a good agreement and, therefore, involving specific photodiode enables to improve the pixel color selectivity design.

Original language	English
Title of host publication	11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004
Pages	306-309
Number of pages	4
State	Published - 1 Dec 2004
Event	11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004 - Tel Aviv, Israel Duration: 13 Dec 2004 → 15 Dec 2004

Publication series

Name	11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004

Conference

Conference	11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004
Country/Territory	Israel
City	Tel Aviv
Period	13/12/04 → 15/12/04

Keywords

APS (Active Pixel Sensor)
CMOS image sensor
Diffusion
Minority carriers
Photocurrent
Sensitivity

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{9d312fe8d76347db95073e06aaf9d076,

title = "Ring-shaped N+/P-well photodiode: Study of responsivity enhancement",

abstract = "In this work the possibilities of CMOS APS spectral response improvement is discussed. Thorough submicron scanning results obtained from various ring-shaped pixel photodiodes with different inner radius, implemented in a standard CMOS 0.35μm technology, are compared with numerical computer simulations. The functional dependence of the pixel response on the ring opening size was discovered and formulated for various wavelengths illumination. We show that the photodiodes with small ring-opening exhibit better sensitivity in the blue spectrum range (420-460 nm). Comparison between the simulation and measurement results shows a good agreement and, therefore, involving specific photodiode enables to improve the pixel color selectivity design.",

keywords = "APS (Active Pixel Sensor), CMOS image sensor, Diffusion, Minority carriers, Photocurrent, Sensitivity",

author = "Tatiana Danov and Igor Shcherback and Orly Yadid-Pecht",

year = "2004",

month = dec,

day = "1",

language = "English",

isbn = "0780387155",

series = "11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004",

pages = "306--309",

booktitle = "11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004",

note = "11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004 ; Conference date: 13-12-2004 Through 15-12-2004",

}

Danov, T, Shcherback, I & Yadid-Pecht, O 2004, Ring-shaped N+/P-well photodiode: Study of responsivity enhancement. in 11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004., TB2.2, 11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004, pp. 306-309, 11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004, Tel Aviv, Israel, 13/12/04.

Ring-shaped N+/P-well photodiode: Study of responsivity enhancement. / Danov, Tatiana; Shcherback, Igor; Yadid-Pecht, Orly.
11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004. 2004. p. 306-309 TB2.2 (11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ring-shaped N+/P-well photodiode

T2 - 11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004

AU - Danov, Tatiana

AU - Shcherback, Igor

AU - Yadid-Pecht, Orly

PY - 2004/12/1

Y1 - 2004/12/1

N2 - In this work the possibilities of CMOS APS spectral response improvement is discussed. Thorough submicron scanning results obtained from various ring-shaped pixel photodiodes with different inner radius, implemented in a standard CMOS 0.35μm technology, are compared with numerical computer simulations. The functional dependence of the pixel response on the ring opening size was discovered and formulated for various wavelengths illumination. We show that the photodiodes with small ring-opening exhibit better sensitivity in the blue spectrum range (420-460 nm). Comparison between the simulation and measurement results shows a good agreement and, therefore, involving specific photodiode enables to improve the pixel color selectivity design.

AB - In this work the possibilities of CMOS APS spectral response improvement is discussed. Thorough submicron scanning results obtained from various ring-shaped pixel photodiodes with different inner radius, implemented in a standard CMOS 0.35μm technology, are compared with numerical computer simulations. The functional dependence of the pixel response on the ring opening size was discovered and formulated for various wavelengths illumination. We show that the photodiodes with small ring-opening exhibit better sensitivity in the blue spectrum range (420-460 nm). Comparison between the simulation and measurement results shows a good agreement and, therefore, involving specific photodiode enables to improve the pixel color selectivity design.

KW - APS (Active Pixel Sensor)

KW - CMOS image sensor

KW - Diffusion

KW - Minority carriers

KW - Photocurrent

KW - Sensitivity

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M3 - Conference contribution

AN - SCOPUS:27644472197

SN - 0780387155

SN - 9780780387157

T3 - 11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004

SP - 306

EP - 309

BT - 11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004

Y2 - 13 December 2004 through 15 December 2004

ER -

Ring-shaped N+/P-well photodiode: Study of responsivity enhancement

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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