Ring-shaped N+/P-well photodiode: Study of responsivity enhancement

Tatiana Danov, Igor Shcherback, Orly Yadid-Pecht

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work the possibilities of CMOS APS spectral response improvement is discussed. Thorough submicron scanning results obtained from various ring-shaped pixel photodiodes with different inner radius, implemented in a standard CMOS 0.35μm technology, are compared with numerical computer simulations. The functional dependence of the pixel response on the ring opening size was discovered and formulated for various wavelengths illumination. We show that the photodiodes with small ring-opening exhibit better sensitivity in the blue spectrum range (420-460 nm). Comparison between the simulation and measurement results shows a good agreement and, therefore, involving specific photodiode enables to improve the pixel color selectivity design.

Original languageEnglish
Title of host publication11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004
Pages306-309
Number of pages4
StatePublished - 1 Dec 2004
Event11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004 - Tel Aviv, Israel
Duration: 13 Dec 200415 Dec 2004

Publication series

Name11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004

Conference

Conference11th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2004
Country/TerritoryIsrael
CityTel Aviv
Period13/12/0415/12/04

Keywords

  • APS (Active Pixel Sensor)
  • CMOS image sensor
  • Diffusion
  • Minority carriers
  • Photocurrent
  • Sensitivity

ASJC Scopus subject areas

  • Engineering (all)

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