Abstract
Crystal defects and their effects during transistor formation and operation are discussed. Hot spot formation around a crystal defect is analyzed. Bipolar transistors are considered.
| Original language | English |
|---|---|
| Pages (from-to) | 11-15 |
| Number of pages | 5 |
| Journal | Microelectronics Journal |
| Volume | 6 |
| Issue number | 3 |
| State | Published - 1 Jan 1975 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering