Room-temperature photoresponse of Schottky photodiodes based on GaN xAs1-x synthesized by ion implantation and pulsed-laser melting

Wei Yi, Taeseok Kim, Ilan Shalish, Marko Loncar, Michael J. Aziz, Venkatesh Narayanamurti

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The spectral responsivity for Schottky photodiodes based on the GaN xAs1-x alloys synthesized using nitrogen (N) ion implantation followed by pulsed-laser melting and rapid thermal annealing is presented. An N-induced redshift up to 250 meV (180 nm) in the photocurrent onset energy (wavelength) is observed. The N concentration dependence agrees with the values measured by photomodulated reflectance and ballistic electron emission microscopy, and with the calculation by the band anticrossing model for the splitting of the conduction band in GaNxAs1-x.

Original languageEnglish
Article number151103
JournalApplied Physics Letters
Volume97
Issue number15
DOIs
StatePublished - 11 Oct 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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