Sb-induced bulk band transitions in Si (111) and Si (001) observed in synchrotron photoemission studies

DH Rich; T Miller; GE Franklin; T-C Chiang

doi:https://doi.org/10.1103/PhysRevB.39.1438

Sb-induced bulk band transitions in Si (111) and Si (001) observed in synchrotron photoemission studies

DH Rich, T Miller, GE Franklin, T-C Chiang

Department of Physics

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19 Scopus citations

Abstract

The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry Γ−Λ−L and Γ−Δ−X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region

Original language	English GB
Pages (from-to)	1438
Number of pages	1
Journal	Physical Review B
Volume	39
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.39.1438
State	Published - 1989

ASJC Scopus subject areas

Condensed Matter Physics

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https://doi.org/10.1103/PhysRevB.39.1438

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title = "Sb-induced bulk band transitions in Si (111) and Si (001) observed in synchrotron photoemission studies",

abstract = "The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry Γ−Λ−L and Γ−Δ−X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region ",

author = "DH Rich and T Miller and GE Franklin and T-C Chiang",

year = "1989",

doi = "https://doi.org/10.1103/PhysRevB.39.1438",

language = "אנגלית",

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pages = "1438",

journal = "Physical Review B",

issn = "2469-9950",

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AU - Rich, DH

AU - Miller, T

AU - Franklin, GE

AU - Chiang, T-C

PY - 1989

Y1 - 1989

N2 - The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry Γ−Λ−L and Γ−Δ−X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region

AB - The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry Γ−Λ−L and Γ−Δ−X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region

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JO - Physical Review B

JF - Physical Review B

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ER -

Sb-induced bulk band transitions in Si (111) and Si (001) observed in synchrotron photoemission studies

Abstract

ASJC Scopus subject areas

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