Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies

D. H. Rich; T. Miller; G. E. Franklin; T. C. Chiang

doi:10.1103/PhysRevB.39.1438

Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies

D. H. Rich
, T. Miller
, G. E. Franklin
, T. C. Chiang

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry L and X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region are addressed.

Original language	English
Pages (from-to)	1438-1441
Number of pages	4
Journal	Physical Review B
Volume	39
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.39.1438
State	Published - 1 Jan 1989
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.39.1438

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title = "Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies",

abstract = "The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry L and X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region are addressed.",

author = "Rich, \{D. H.\} and T. Miller and Franklin, \{G. E.\} and Chiang, \{T. C.\}",

year = "1989",

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AU - Rich, D. H.

AU - Miller, T.

AU - Franklin, G. E.

AU - Chiang, T. C.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry L and X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region are addressed.

AB - The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry L and X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region are addressed.

UR - https://www.scopus.com/pages/publications/35949011116

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DO - 10.1103/PhysRevB.39.1438

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JO - Physical Review B

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Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies

Abstract

ASJC Scopus subject areas

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