A novel approach of Self-Powered CMOS Active Pixel Sensors (SPS) for ultra low-power applications is presented. The SPS architecture allows generation of electric power by employing a light sensitive device, located on the same silicon die with an Active Pixel Sensor (APS). While providing energy required for the pixel and signal readout circuit operation, the SPS enables power dissipation reduction from the conventional power supply. This makes the SPS architecture very useful in applications where ultra low-power is the main demand. A detailed analysis of the proposed structure is carried out, with respect to power dissipation requirements, sensor area and power generation efficiency, showing advantages and drawbacks of the SPS architecture. An illustrative example of an SPS structure in 0.35um standard CMOS technology is discussed and a test chip design, implemented in advanced 0.18um standard CMOS technology is presented.
|Number of pages||4|
|Journal||Proceedings - IEEE International Symposium on Circuits and Systems|
|State||Published - 1 Dec 2005|
|Event||IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan|
Duration: 23 May 2005 → 26 May 2005
ASJC Scopus subject areas
- Electrical and Electronic Engineering