SEM metrology for advanced lithographies

Benjamin Bunday, John Allgair, Bryan J. Rice, Jeff Byers, Yohanan Avitan, Ram Peltinov, Maayan Bar-zvi, Ofer Adan, John Swyers, Roni Z. Shneck

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. The industry standard lithographic wavelength has evolved many times, from G-line to I-line, deep ultraviolet (DUV) based on KrF, and 193nm based on ArF. At each of these steps, new photoresist materials have been used. For the 45nm node and beyond, new lithography techniques are being considered, including immersion ArF lithography and extreme ultraviolet (EUV) lithography. As in the past, these techniques will use new types of photoresists with the capability of printing 45nm node (and beyond) feature widths and pitches. This paper will show results of an evaluation of the critical dimension-scanning electron microscopy (CD-SEM)-based metrology capabilities and limitations for the 193nm immersion and EUV lithography techniques that are suggested in the International Technology Roadmap for Semiconductors. In this study, we will print wafers with these emerging technologies and evaluate the performance of SEM-based metrology on these features. We will conclude with preliminary findings on the readiness of SEM metrology for these new challenges.

Original languageEnglish
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXI
EditionPART 2
DOIs
StatePublished - 15 Oct 2007
EventMetrology, Inspection, and Process Control for Microlithography XXI - San Jose, CA, United States
Duration: 26 Feb 20071 Mar 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
NumberPART 2
Volume6518
ISSN (Print)0277-786X

Conference

ConferenceMetrology, Inspection, and Process Control for Microlithography XXI
Country/TerritoryUnited States
CitySan Jose, CA
Period26/02/071/03/07

Keywords

  • 193nm immersion
  • Applied materials
  • ArF
  • DUV
  • EUV
  • ISMI
  • Photoresist
  • Resist
  • SEM based metrology
  • SEMATECH
  • Shrinkage
  • Slimming
  • iArF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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